High rectifying behavior in Al/Si nanocrystal-embedded SiOxNy/p-Si heterojunctions
نویسندگان
چکیده
منابع مشابه
High rectifying behavior in Al/Sinanocrystal-embedded SiOxNy/p-Si heterojunctions
We examine the electrical properties of MIS devices made of Al/Si nanocrystal–SiOxNy/p-Si. The J–V characteristics of the devices present a high rectifying behavior. Temperature measurements show that the forward current is thermally activated following the thermal diffusion model of carriers. At low reverse bias, the current is governed by thermal emission amplified by the Poole–Frenkel effect...
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ژورنال
عنوان ژورنال: Semiconductor Science and Technology
سال: 2011
ISSN: 0268-1242,1361-6641
DOI: 10.1088/0268-1242/26/5/055005